1SS133M Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 300mW Hermetically Sealed Glass Switching Diode

Pb RoHS
COMPLIANCE
1SS133M
300mW Hermetically Sealed Glass
Switching Diode
DO-34
Features
— Fast switching device(T_RR<4.0nS)
— DO-34 package (JEDEC DO-204)
— Through-hole device type mounting
— Hermetically sealed glass
— Compression bonded construction
— All external surfaces are corrosion resistant
and leads are readily solderable
— RoHS compliant
— Solder hot dip Tin (Sn) lead finish
— Cathode indicated by polarity band
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25^oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Power Dissipation
Pd
300
Working Inverse Voltage
Average Rectified Current
W_IV
90
Io
150
Non-Repetitive Peak Forward Current
IFM
450
Peak Forward surge Current
Operating Junction Temperature
Storage Temperature Range
Electrical Characteristics
I_FSURGE
T_J
T_STG
2
+ 175
-65 to + 200
Type Number
Symbol
Min
Max
Breakdown Voltage
I_R=500nA
B_V
80
Forward Voltage
I_F =100mA
VF
1.2
Reverse Leakage Current
V_R=80V
Junction Capacitance V_R=0, f=1.0MHz
Reverse Recovery Time (Note 1)
IR
500
Cj
-
4.0
trr
-
4.0
Notes: 1. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Units
mW
V
mA
mA
A
O_C
O_C
Units
V
V
nA
pF
nS
Version: A07