1N914BW Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 400mW High Speed SMD Switching Diode

Small Signal Diode
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
SOD-123F
B
Features
—Fast switching device(Trr<4.0nS)
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : Flat lead SOD-123 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Polarity : Indicated by cathode band
—Weight : 8.85±0.5 mg
Ordering Information
C
A
D
E
F
Dimensions
A
B
C
D
E
F
Unit (mm) Unit (inch)
Min Max Min Max
1.5 1.7 0.059 0.067
3.3 3.7 0.130 0.146
0.5 0.7 0.020 0.028
2.5 2.7 0.098 0.106
0.8 1.0 0.031 0.039
0.05 0.2 0.002 0.008
Part No.
1NxxxxW RH
Package
SOD-123F
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRSM
VRRM
IFRM
IO
RθJA
TJ, TSTG
Value
400
100
75
300
150
450
-65 to + 150
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
IR=100uA
IR=5uA
100
V(BR)
75
Forward Voltage
1N4448W, 1N914BW IF=5.0mA
1N4148W
IF=10.0mA
0.62
0.72
VF
1.0
1N4448W, 1N914BW IF=100.0mA
1.0
VR=20V
25
Reverse Leakage Current
IR
VR=75V
5.0
Junction Capacitance
VR=0, f=1.0MHz
CJ
4.0
Reverse Recovery Time (Note 2)
Trr
4.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA
Units
mW
V
V
mA
mA
°C/W
°C
Units
V
V
nA
μA
pF
ns
Version : C09