1N914B Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

Small Signal Diode
1N4148/1N4448/1N914B
500mW High Speed Switching Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
Features
—Fast switching device(Trr<4.0nS)
—Through-hole device type mounting
—Moisture sensitivity level 1
—Solder hot dip Tin(Sn) lead finish
—Pb free version and RoHS compliant
—All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Mechanical Data
—Case : DO-35 package (SOD-27)
—High temperature soldering guaranteed : 260°C/10s
—Polarity : Indicated by cathode band
—Weight : 109 ± 4 mg
Ordering Information
D
C
A
B
Dimensions
A
B
C
D
Unit (mm) Unit (inch)
Min Max Min Max
0.45 0.55 0.018 0.022
3.05 5.08 0.120 0.200
25.4 38.1 1.000 1.500
1.53 2.28 0.060 0.090
Part No.
1Nxxxx A0
1Nxxxx R0
Package
DO-35
DO-35
Packing
5Kpcs / Ammo
10Kpcs / 14" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Forward Surge Current
Pulse Width 8.3ms
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IFSM
IFM
IO
RθJA
TJ, TSTG
Value
500
100
2.0
450
150
240
-65 to + 150
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
IR=100uA
IR=5uA
V(BR)
100
75
Forward Voltage
1N4448, 1N914B
1N4148
IF=5.0mA
IF=10.0mA
0.62
0.72
VF
1.0
1N4448, 1N914B
IF=100.0mA
1.0
VR=20V
25
Reverse Leakage Current
IR
VR=75V
5.0
Junction Capacitance
VR=0, f=1.0MHz
CJ
4.0
Reverse Recovery Time (Note 2)
Trr
4.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA
Units
mW
V
A
mA
mA
°C/W
°C
Units
V
V
nA
μA
pF
ns
Version : C09