1N5820_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Schottky Barrier Rectifier

CREAT BY ART
FEATURES
Schottky Barrier Rectifier
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1N5820 thru 1N5822
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Polarity: Indicated by cathode band
Weight: 1.10g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL 1N5820
1N5821
1N5822
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
20
30
40
V_RMS
14
21
28
V_DC
20
30
40
I_F(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
70
Maximum instantaneous forward voltage (Note 1)
@3A
V_F
0.475
0.500
0.525
Maximum reverse current @ rated VR T_J=25 ℃
T_J=100℃
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
I_R
Cj
R_θJA
T_J
T_STG
0.5
10
200
40
- 55 to +125
- 55 to +125
UNIT
V
V
V
A
A
V
mA
pF
O_C/W
O_C
O_C
Document Number: D1307015
Version: G13