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1N5817_14 Datasheet, PDF (1/4 Pages) Diodes Incorporated – Guard Ring Die Construction for Transient Protection
CREAT BY ART
FEATURES
Schottky Barrier Rectifier
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1N5817 thru 1N5819
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Polarity: Indicated by cathode band
Weight: 0.33 gram (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL 1N5817
1N5818
1N5819
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
20
30
40
VRMS
14
21
28
VDC
20
30
40
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
VF
0.45
0.55
0.60
Maximum reverse current @ rated VR TJ=25 ℃
TJ=100℃
Typical junction capacitance (Note 2)
Voltage rate of change (Rated VR)
IR
Cj
dV/dt
1
10
55
10000
Typical thermal resistance
RθJC
RθJA
45
100
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
TJ
TSTG
- 55 to +125
- 55 to +125
Unit
V
V
V
A
A
V
mA
pF
V/μs
OC/W
OC
OC
Document Number: D1307014
Version: F13