1N5711W Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5711W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop
Guard Ring Construction for Transient
Protection
Fast switching time
Low Reverse Capacitance
Surface mount package ideally suited for
automatic insertion
Mechanical Data
Voltage Range
70 Volts
250m Watts Power Dissipation
SOD-123
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SA
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
1N5711W
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Current
VRRM
VRWM
70
V
VR
VR(RMS)
49
V
IFM
15
mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Pd
RθJA
T_J, T_STG
250
600
-65 to + 175
mW
K/W
O_C
Type Number
Reverse Breakdown Voltage
Reverse Leakage Current
IR=10uA
VR=50V
Symbol
Min
V(BR)
70
IR
-
Typ
Max Units
-
-
V
-
200
nA
Forward Voltage Drop
Junction Capacitance
IF=1.0mA
IF=15mA
VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
VF
70
-
-
0.41
V
-
1.0
Cj
-
-
2.0
pF
trr
-
-
1.0
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
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