1N5391_14 Datasheet, PDF (1/4 Pages) Diotec Semiconductor – Silicon Rectifier Diodes – Silizium-Gleichrichterdioden

CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
1N5391 thru 1N5399
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
1N 1N 1N 1N 1N 1N 1N
SYMBOL
5391 5392 5393 5395 5397 5398 5399
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
50
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
V_F
1.1
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Typical junction capacitance (Note 2)
Cj
Typical thermal resistance
R_θJC
R_θJL
R_θJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
T_J
T_STG
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.0
5
50
50
5
12
60
- 55 to +150
- 55 to +150
V
μA
pF
O_C/W
O_C
O_C
Document Number: DS_D1406009
Version: D14