1N5391S_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.5 AMPS. Silicon Rectifiers

1N5391S - 1N5399S
1.5 AMPS. Silicon Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260^oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 0.40 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol 1N 1N 1N 1N 1N 1N 1N _Units
5391S 5392S 5393S 5395S 5397S 5398S 5399S
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 75 ^oC
V_DC
I_(AV)
50 100 200 400 600 800 1000 V
1.5
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
50
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
V_F
1.1
1.0
V
Maximum DC Reverse Current
@ TA=25 ^oC at Rated DC Blocking Voltage @ I_R
TA=125 ^oC
5.0
uA
50
uA
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@TA=75 ^oC
HT_IR
30
uA
Typical Junction Capacitance ( Note 1 )
Cj
30
pF
Typical Thermal Resistance ( Note 2 )
R_θJA
50
Operating Temperature Range
TJ
-65 to +125
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
o_C/W
o_C
o_C
Version: A06