1N4933G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated Fast Recovery Rectifiers

1N4933G thru 1N4937G
Taiwan Semiconductor
FEATURES
CREAT BY ART
Glass Passivated Fast Recovery Rectifiers
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
1N
1N
1N
1N
1N
SYMBOL
4933G 4934G 4935G 4936G 4937G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
1.0
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
1.2
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
R_θJA
T_J
T_STG
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
150
200
10
65
- 55 to +150
- 55 to +150
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1310003
Version: F13