1N4741A_1 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated Junction Silicon Zener Diode

1N4741A - 1M200Z
Glass Passivated Junction Silicon Zener Diode
DO-41
Features
² Low profile package
² Built-in strain relief
² Glass passivated junction
² Low inductance
² Typical I_R less than 5.0ìA above 11V
² High temperature soldering guaranteed:
260^oC / 10 seconds at terminals
² Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Mechanical Data
² Case: Molded plastic DO-41
² Epoxy: UL 94V-0 rate flame retardant
² Lead: Pure tin plated lead free,, solderable per
MIL-STD-202, Method 2025
² Polarity: Color Band denotes cathode end
² Mounting position : Any
² Weight: 0.012 ounces, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Type Number
DPeearaktePoawboevreD5is0s^{oiCpatio( nNoatteT1A=)50oC,}
Symbol
P_D
Value
1.0
6.67
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) ( Note 2 )
I_FSM
10.0
Operating and Storage Temperature Rang
T_J, T_STG
-55 to + 150
Notes: ^{1. Mounted on 5.0mm2 (0.013mm thick) land areas.}
2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave,
Duty Cycle=4 Pulses Per Minute Maximum.
Units
Watts
mW/ ^oC
Amps
o_C
- 598 -
Version: B07