1N4741A Datasheet, PDF (1/5 Pages) Transys Electronics – GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

1N4741A THRU 1M200Z
Glass Passivated Junction Silicon Zener Diode
Features
Voltage Range
11 to 200 Volts
1.0 Watts Peak Power
DO-41
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical IR less than 5.0μA above 11V
High temperature soldering guaranteed:
260^OC / 10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Mechanical Data
Case: Molded plastic DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
Method 2025
Polarity: Color Band denotes cathode end
Mounting position : Any
Weight: 0.012 ounces, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
Peak Power Dissipation at T_A=50^OC,
Derate above 50 ^OC (Note 1)
Symbol
P_D
Value
1.0
6.67
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
I_FSM
10.0
(JEDEC method) (Note 2)
Operating and Storage Temperature Range
T_J, T_STG
Notes: 1. Mounted on 5.0mm² (0.013mm thick) land areas.
-55 to + 150
2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave,
Duty Cycle=4 Pulses Per Minute Maximum.
Units
Watts
mW/ ^OC
Amps
O_C
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