1N4740A_13 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 1.0 Watt Glass Passivated Junction Silicon Zener Diodes

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1N4740A - 1M200Z
1.0 Watt Glass Passivated Junction Silicon Zener Diodes
DO-41
Features
— Low profile package
— Built-in strain relief
— Glass passivated junction
— Low inductance
— Typical I_R less than 5uA above 11V
— High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
— Plastic package has Underwriters
Laboratory Flammability Classification 94V-0
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: Molded plastic DO-41
— Expoxy: UL 94V-0 rate flame retardant
— Lead: Pure tin plated, lead free,
solderable per MIL-STD-202, method 2025
— Polarity: Color Band denotes cathode end
— Mounting position: Any
— Weight: 0.3 gram
Ordering Information (example)
Part No. Package
Packing
INNER
TAPE
Packing
code
1N4740A DO-41 3K / AMMO box
52mm
A0
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Type Number
Symbol
Packing code
(Green)
A0G
Value
Peak Power Dissipation at TA=50℃,
Derate above 50℃ (Note 1)
P_D
1.0
6.67
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
I_FSM
10
(JEDEC method)(Note 2)
Operating and Storage Temperature Range
T_J, T_STG
Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB
-55 to +150
Note 2: Measure on 8.3ms Single half Sine-Wave of equivalent square wave, duty cycle= 4 pulse per minute maximum
Unit
Watts
mW/℃
Amps
℃
Version:F12