1N4448W_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Fast Switching Surface Mount Diode

1N4448W
Fast Switching Surface Mount Diode
Voltage Range
75 Volts
350m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
Mechanical Data
0.053(1.35)
Max.
SOD-123
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
Case: SOD-123, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code or Date
Code only
Type Code: T5
Weight: 0.01 gram (approx.)
0.010(0.25)
Min.
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
Pd
RθJA
TJ, TSTG
100
75
53
500
250
4.0
2.0
350
357
-65 to + 150
Type Number
Forward Voltage
IF=5.0mA
IF= 10mA
IF =100mA
IF=150mA
Peak Reverse Current VR=75V
VR=75V, Tj=150℃
VR=25V, TJ=150℃
VR=20V
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
Symbol
VF
IR
Cj
trr
Min
0.62
_
_
_
Max
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
Units
V
V
V
mA
mA
A
mW
K/W
O_C
Units
V
uA
nA
pF
nS
- 830 -