1N4148_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 500mW High Speed Switching Diode

Small Signal Product
1N4148/1N4448/1N914B
Taiwan Semiconductor
500mW High Speed Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Moisture sensitivity level 1
- Solder hot dip Tin(Sn) lead finish
- Pb free version and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen-free
DO-35
Hermetically Sealed Glass
MECHANICAL DATA
- Case : DO-35
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by black cathode band
- Weight : 109 ± 4 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Pluse Width = 1μs, Square Wave
Non-Repetitive Peak Forward Current
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
P_D
V_RRM
I_FSM
I_FM
I_O
R_θJA
T_J , T_STG
500
100
2.0
450
150
240
-65 to +150
UNIT
mW
V
A
mA
mA
o_C/W
o_C
PARAMETER
Reverse Breakdown Voltage
SYMBOL
V_(BR)
Forward Voltage
V_F
Reverse Leakage Current
I_R
Junction Capacitance
C_J
Reverse Recovery Time (Note 1)
Trr
Note : 1. Test Conditions : I_F=10mA, V_R=6V, R_L=100Ω, I_RR=1mA
MIN
100
75
0.62
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
MAX
CONDITION
UNIT
-
I_R=100μA
V
-
I_R=5μA
0.72 ^{1N4448 , 1N914B I}F^=5.0mA
1.0 ^1N4148
I_F=10.0mA V
1.0 ^{1N4448, 1N914B I}F^=100.0mA
25
V_R=20V
nA
5.0
V_R=75V
μA
4.0
V_R=0 , f=1.0MHz
pF
4.0
ns
Document Number: DS_S1410004
Version: H14