1N4148WS_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 200mW High Speed SMD Switching Diode

Small Signal Product
1N4148WS/1N4448WS/1N914BWS
Taiwan Semiconductor
200mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.85 ± 0.5 mg
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Non-Repetitive Peak Reverse Voltage
V_RM
100
Repetitive Peak Reverse Voltage
V_RRM
75
Reverse Voltage
V_R
100
Non-Repetitive Peak Forward Current
I_FRM
300
Mean Forward Current
I_O
150
Thermal Resistance (Junction to Ambient)
R_θJA
625
Junction and Storage Temperature Range
T_J , T_STG
-65 to + 150
PARAMETER
Reverse Breakdown Voltage
I_R=100μA
I_R=5μA
Forward Voltage
1N4448WS, 1N914BWS
I_F=5.0mA
1N4148WS
1N4448WS, 1N914BWS
Reverse Leakage Current
I_F=10.0mA
I_F=100.0mA
V_R=20V
V_R=75V
Junction Capacitance
V_R=0, f=1.0MHz
Reverse Recovery Time
I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA
SYMBOL
V_(BR)
V_F
I_R
C_J
t_rr
MIN
100
75
0.62
-
-
-
-
-
-
MAX
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
UNIT
mW
V
V
V
mA
mA
o_C/W
o_C
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S0000018
Version: H15