1N4148W-G_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Speed SMD Switching Diode

Small Signal Product
High Speed SMD Switching Diode
1N4148W-G
Taiwan Semiconductor
FEATURES
- Fast switching device (t_rr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10 ± 0.5 mg
- Marking Code: T4
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
P_D
350
DC blocking voltage
V_R
100
Repetitive peak reverse voltage
V_RRM
100
Work peak reverse voltage
V_RWM
100
RMS reverse voltage
V_R(RMS)
70
Repetitive peak forward current
I_FRM
300
Mean forward current
I_O
150
Non-repetitive peak forward surge current @ t=1 ms
@ t=10 ms
I_FSM
2.0
1.0
Thermal resistance (Junction to Ambient) (Note 1)
Junction and storage temperature range
R_θJA
T_J , T_STG
357
-65 to + 150
PARAMETER
SYMBOL
Forward voltage
Reverse leakage current
I_F=1.0mA
I_F=10mA
I_F=50mA
V_F
I_F=150mA
V_R=20V
V_R=75V
V_R=25V, Tj=150°C
I_R
V_R=75V, Tj=150°C
Junction capacitance
Reverse recovery time
V_R=0, f=1.0MHz
C_J
(Note 2)
t_rr
Notes : 1. Valid provided that terminals are kept at ambient temperature
Notes : 2. Reverse Recovery Test Conditions : I_F=10mA, I_R=10mA, R_L=100Ω, I_RR=1mA
MIN
-
-
-
-
-
-
-
-
-
-
MAX
0.715
0.855
1.0
1.25
25
2.5
30
50
2.0
4.0
UNIT
mW
V
V
V
V
mA
mA
A
o_C/W
o_C
UNIT
V
nA
μA
μA
μA
pF
ns
Document Number: DS_S1405027
Version: C15