1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4148
Switching Diode
DO-35
Features
Fast switching speed
General purpose rectification
Silicon epitaxial planar construction
Mechanical Data
0.15
1.02(26) MIN. _{(3.9) MAX.} 1.02(26) MIN.
0.02(0.55) MAX.
0.08(2.0) MAX.
Case: DO-35
Leads: Pure tin plated lead free, Solderable
per MIL-STD-202, Method 208
Polarity: Cathode band
Marking: Type number
Weight: 0.13 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current tp=1us
Repetitive Peak Forward Current
Forward Current
Average Forward Current VR=0
Power Dissipation I=4mm, TL=45 ^oC
I=4mm, TL≦25 ^oC
Junction Ambient I=4mm, TL= constant
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Forward Voltage @ IF=10mA
Peak Reverse Current
VR=75V
VR=20V, TJ=150 ^oC
VR=20V
Breakdown Voltage IR=100uA, tp/T=0.01, tp=0.3ms
Capacitance VR=0, f=1.0MHz, VHF=50mV
Rectification Efficiency VHF=2V, f=100MHz
Reverse Recovery Time IF=IR=10mA, IR=1mA
IF=10mA, VR=6V, IR=0.1x IR, RL=100Ω
Symbol
VRRM
VR
IFSM
IFRM
I_F
IFAV
P_V
P_V
R_θJA
T_J, T_STG
Symbol
V_F
IR
V_(BR)
Cj
Tlr
trr
trr
1N4148
100
75
2
500
300
150
440
500
350
-65 to + 200
Units
V
V
A
mA
mA
mA
mW
mW
K/W
o_C
Min
Max Units
-
1.0
V
5
uA
-
50
uA
25
nA
100
-
V
-
4.0
pF
45
-
%
-
8.0
nS
-
4.0
nS
- 612 -
Version: B07