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1N4001S_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. Silicon Rectifiers
1N4001S -1N4007S
1.0 AMP. Silicon Rectifiers
A-405
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
ψ0.6mm leads
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead lengths
at 5 lbs.,(2.3kg) tension
Weight: 0.22 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol 1N 1N 1N 1N 1N 1N 1N Units
4001S 4002S 4003S 4004S 4005S 4006S 4007S
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TA = 75 oC
VDC
I(AV)
50 100 200 400 600 800 1000 V
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
30
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
VF
1.0
V
Maximum DC Reverse Current @ TA=25 oC
at Rated DC Blocking Voltage @ TA=125 oC
IR
5.0
uA
50
uA
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@TA=75 oC
HTIR
30
uA
Typical Junction Capacitance ( Note 1 )
Cj
15
pF
Typical Thermal Resistance ( Note 2 )
RθJA
50
Operating and Storage Temperature Range TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Mount on Cu-Pad Size 5mm x 5m on P.C.B.
oC/W
oC
Version: A06