3EZ11 Datasheet, PDF (4/5 Pages) Pan Jit International Inc. – GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)

For worst-case design, using expected limits of Iz, limits
of P_D and the extremes of T_J ( T_JL ) may be estimated.
Changes in voltage, Vz, can then be found from:
V = _VZ T_J
VZ ^{, the zener voltage temperature coefficient, is}
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of Figure
3 be exceeded.
RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
TEMPERATURE COEFFICIENT REAGES
(90% of the Units are int he Ranges Indicated)
Fig. 5-UNITS TO 12 VOLTS
Fig. 6-UNITS 10 TO 200 VOLTS
Fig. 7-V_Z = 3.9 THRU 10 VOLTS
Fig. 8- V_Z = 12 THRU 82 VOLTS