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TR25 Datasheet, PDF (1/3 Pages) Transys Electronics – SILICON TRIACS
l Sensitive Gate Triacs
l 2.5 A RMS
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
l Max IGT of 5 mA (Quadrant 1)
TR2.5 SERIES
SILICON TRIACS
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR2.5-400-14
Repetitive peak off-state voltage (see Note 1)
TR2.5-600-14
TR2.5-700-14
TR2.5-800-14
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
2.5
12
14
±0.2
1.3
0.3
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 100 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IGTM
Peak gate trigger
current
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
IG = 0
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
TC = 110°C
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
MIN TYP MAX UNIT
±1
mA
5
-8
mA
-10
25
0.9 2.5
-1.2 -2.5
V
-1.2 -2.5
1.2
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