TR16 Datasheet, PDF (1/3 Pages) Transys Electronics – SILICON TRIACS

TR16 SERIES
SILICON TRIACS
l High Current Triacs
l 16 A RMS
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
l 125 A Peak Current
l Max I_GT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR16-400-125
Repetitive peak off-state voltage (see Note 1)
TR16-600-125
TR16-700-125
TR16-800-125
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
V_DRM
I_T(RMS)
I_TSM
I_GM
T_C
T_stg
T_L
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETE R
TEST CONDITIONS
MIN TYP MAX UNIT
I_DRM
Repetitive peak
off-state current
V_D = rated V_DRM
I_G = 0
T_C = 110°C
±2
mA
Gate trigger
I_GT
current
Gate trigger
V_GT
voltage
V_T
On-state voltage
I_H
Holding current
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
I_TM = ±22.5 A
V_supply = +12 V†
V_supply = -12 V†
R_L = 10 W
R_L = 10 W
R_L = 10 W
R_L = 10 W
R_L = 10 W
R_L = 10 W
R_L = 10 W
R_L = 10 W
I_G = 50mA
I_G = 0
I_G = 0
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
t_p(g) > 20 m s
(see Note 4)
Init’ I_TM = 100 mA
Init’ I_TM = -100 mA
12
50
-19 -50
mA
-16 -50
34
0.8
2
-0.8 -2
V
-0.8 -2
0.9
2
±1.4 ±1.7
V
22
40
mA
-12 -40
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t_p = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.