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TGA4501-EPU Datasheet, PDF (9/9 Pages) TriQuint Semiconductor – 28-31 GHz Ka Band HPA | |||
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Advanced Product Information
December 14, 2001
TGA4501-EPU
Assembly Process Notes
Reflow process assembly notes:
⢠Use AuSn (80/20) solder with limited exposure to temperatures at or above 300ÎC.
⢠An alloy station or conveyor furnace with reducing atmosphere should be used.
⢠No fluxes should be utilized.
⢠Coefficient of thermal expansion matching is critical for long-term reliability.
⢠Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
⢠Vacuum pencils and/or vacuum collets are the preferred method of pick up.
⢠Air bridges must be avoided during placement.
⢠The force impact is critical during auto placement.
⢠Organic attachment can be used in low-power applications.
⢠Curing should be done in a convection oven; proper exhaust is a safety concern.
⢠Microwave or radiant curing should not be used because of differential heating.
⢠Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
⢠Thermosonic ball bonding is the preferred interconnect technique.
⢠Force, time, and ultrasonics are critical parameters.
⢠Aluminum wire should not be used.
⢠Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
⢠Maximum stage temperature is 200ÎC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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