TGA2622-CP_15 Datasheet, PDF (8/15 Pages) TriQuint Semiconductor – 9 to 10 GHz 35 W GaN Power Amplifier

TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Typical Performance: Large Signal (CW Operation)
55
PAE vs. Frequency vs. V_D
P_IN = 18dBm
CW
Temp. = +25 C
50
45
40
35
30
25
8.5
Vd=25V
Vd=28V
Vd=30V
I_DQ = 290mA
9
9.5
10
Frequency (GHz)
10.5
Power Gain vs. Frequency vs. V_D
30
Temp. = +25 C
CW
29
P_IN = 18dBm
28
27
26
25
24
23
8.5
Vd=25V
Vd=28V
Vd=30V
I_DQ = 290mA
9
9.5
10
Frequency (GHz)
10.5
PAE vs. Frequency vs. Temperature
55
P_IN = 18dBm
CW
50
45
40
35
30
25
8.5
-40C
+25C
+85C
V_D = 28V, I_DQ = 290mA
9
9.5
10
Frequency (GHz)
10.5
Power Gain vs. Frequency vs. Temp.
30
P_IN = 18dBm
29
V_D = 28V, I_DQ = 290mA
28
27
26
25
24
23
8.5
-40C
+25C
+85C
CW
9
9.5
10
Frequency (GHz)
10.5
PAE vs. Input Power vs. Temperature
60
Freq. = 9.5 GHz
CW
50
40
30
20
-40C
+25C
10
+85C
V_D = 28V, I_DQ = 290mA
0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Power Gain vs. Input Power vs. Temp.
38
36
V_D = 28V, I_DQ = 290mA
34
32
30
28
26
24
22
2
-40C
+25C
+85C
CW
Freq. = 9.5 GHz
4 6 8 10 12 14 16 18 20
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
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Disclaimer: Subject to change without notice
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