QPA2626 Datasheet, PDF (8/14 Pages) TriQuint Semiconductor – 17-22 GHz GaAs Low Noise Amplifier

QPA2626
17-22 GHz GaAs Low Noise Amplifier
Typical Performance: Linearity
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 3.5 V, IDQ = 90 mA. Data de-embedded to device reference plane.
IM3 vs. Frequency vs. Temperature
0
∆f =10 MHz, Pout/Tone = 0 dBm
-10
0
IM3 vs. Frequency vs. V_D
IDQ = 90 mA, ∆f =10 MHz, Pout/Tone = 0 dBm
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-40 C
+25 C
+85 C
-80
17
18
19
20
21
22
23
Frequency (GHz)
-70
3.0 V
3.5 V
4.0 V
-80
17
18
19
20
21
22
23
Frequency (GHz)
IM3 vs. Frequency vs. Temperature
0
∆f =10 MHz, Pout/Tone = 5 dBm
-10
-20
-30
-40
-50
-60
-70
-40 C
+25 C
+85 C
-80
17
18
19
20
21
22
23
Frequency (GHz)
0
IM3 vs. Frequency vs. I_DQ
VD = 3.5 V, ∆f =10 MHz, Pout/Tone = 0 dBm
-10
-20
-30
-40
-50
-60
-70
70 mA 90 mA 110 mA
-80
17
18
19
20
21
22
23
Frequency (GHz)
IM3 vs. Frequency vs. Temperature
0
∆f =10 MHz, Pout/Tone = 10 dBm
-10
-20
-30
-40
-50
-60
-70
-40 C
+25 C
+85 C
-80
17
18
19
20
21
22
23
Frequency (GHz)
OTOI vs. Frequency vs. Temperature
40
∆f =10 MHz, Pout/Tone = 0 dBm
35
30
25
20
15
-40 C
+25 C
+85 C
10
17
18
19
20
21
22
23
Frequency (GHz)
Datasheet: Rev - 03-03-16
© 2016 TriQuint
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Disclaimer: Subject to change without notice
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