TGS4307-EPU Datasheet, PDF (7/9 Pages) TriQuint Semiconductor – 77 GHz Transceiver Switch

Advance Product Information
July 22, 2004
TGS4307-EPU
Assembly Drawing
External Interface (TFN)
Substrate: Alumina
r^=9.8
Thickness=5mil
Switch MMIC
Substrate: GaAs
r^=12.9
Thickness=4mil
5mil
3mil
TFN
3 Bondwires
Gap ~4mil
Diameter=0.7mil
Height< 1mil
Microstrip Trace
Width=120mm (50 )
RF I/O Pad
Note: Ribbon bond is acceptable
(instead of 3 bondwires)
Recommended Interconnect Scheme
B1
B2
B3
B4
B5
Note: Unused Ports should be terminated with 50 .
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications.
Specifications are subject to change without notice
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