TGA8300-SCC Datasheet, PDF (5/7 Pages) TriQuint Semiconductor – Gain Block Amplifier

TGA8300 - SCC
RF CHARACTERISTICS
GP
SWR(in)
SWR(out)
P 1dB
NF
PARAMETER
Small–signal power gain
Input standing wave ratio
Output standing wave ratio
Output power at 1–dB gain compression
Noise figure
IP 3
Output third–order intercept point
TEST CONDITIONS
f = 2 to 18 GHz
f = 2 to 18 GHz
f = 2 to 18 GHz
f= 2 to 18 GHz
f = 2 to 18 GHz
f = 8 GHz
f= 12 GHz
f =18 GHz
V⁺ = 6 V, I⁺ = 50% I_DSS, T_A = 25°C
TYP UNIT
7.5 dB
1.5:1 -
1.4:1 -
20 dBm
5.5 dB
32
28 dBm
27
DC CHARACTERISTICS
PARAMETER
I DSS Total zero–gate–voltage drain current
at saturation
TEST CONDITIONS
VDS = 0.5 V to 3.5 V, V GS = 0
MIN MAX UNIT
130 300 mA
T_A = 25°C
V_DS for I_DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
THERMAL INFORMATION
PARAMETER
R JC Thermal resistance, channel–to–backside
TEST CONDITIONS
V ⁺ = 6 V, I⁺ = 50% I DSS
NOM
45
UNIT
°C/W
EQUIVALENT
SCHEMATIC
V⁺
RF
Input
FET 1
189 m
FET 2
189 m
FET 3
189 m
FET 4
189 m
RF
Output
V^-
RECOMMENDED TEST
CONFIGURA TION
RF Input
DC Block
DUT
RF Output
5
TriQuint Semiconductor, Inc. • Texas Facilities • [phone] • www.triquint.com