T1G4003532-FL_15 Datasheet, PDF (5/13 Pages) TriQuint Semiconductor – 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor

T1G4003532-FL
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance (cont.)
Performance is based on compromised impedance point and measured at DUT reference plane.
T1G4003532-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
26
80
25
70
24
60
23 ^ZS ^{= 2.67 + j3.64 Ω}
50
22 ^{ZL = 9.98 + j4.78 Ω}
40
21
30
20
Gain
DrEff.
20
19
PAE
10
18
0
35
37
39
41
43
45
47
Pout [dBm]
T1G4003532-FL Gain DrEff. and PAE vs. Pout
2000 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
20
80
19
70
18
60
17
Z_S = 12.40 - j14.04 Ω
Z_L = 6.85 + j2.67 Ω
50
16
40
15
30
14
Gain
DrEff.
20
13
PAE
10
12
0
35
37
39
41
43
45
47
Pout [dBm]
T1G4003532-FL Gain DrEff. and PAE vs. Pout
3100 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
20
80
19
70
18
60
17 ^{ZS = 11.09 - j9.69 Ω}
50
Z_L = 10.06 + j3.58 Ω
16
40
15
30
14
Gain
DrEff.
20
13
PAE
10
1235
37
39
41
43
45
470
Pout [dBm]
T1G4003532-FL Gain DrEff. and PAE vs. Pout
3500 MHz, 100us 20%, Vds = 32V, Idq = 150 mA
20
80
19
70
18
60
17 _{ZS = 9.66 + j0.07 Ω}
50
16 ^ZL ^{= 7.66 + j0.57 Ω}
40
15
30
14
Gain
DrEff.
20
13
PAE
10
1235
37
39
41
43
45
470
Pout [dBm]
Data Sheet: Rev A 10/18/2012
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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