TGV2204-FC Datasheet, PDF (4/10 Pages) TriQuint Semiconductor – 19 GHz VCO with Prescaler

TGV2204-FC
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70 ºC
Thermal Resistance, θjc
Mounting Temperature
Storage Temperature
Vcc= 5 V
Id = 165 mA
Pd = 0.825 W
Tbaseplate = 70 ºC
Value
Pd = TBD W
Tjunction = TBD ºC
Tm = TBD Hrs
θjc = 80.4 (ºC/W)
Tjunction = 133.5 ºC
Tm = TBD Hrs
Refer to Solder Reflow
Profiles (pp 11)
-65 to 150 ºC
Notes
1/ 2/
1/
For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 ºC – Tbase ºC)/θjc.
2/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
Median Lifetime (Tm) vs Channel Temperature
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04 ^FET11
25
50
75
100
125
150
175
200
Channel Temperature (°C)
4
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November 2009 © Rev D