TGF2023-05 Datasheet, PDF (4/7 Pages) TriQuint Semiconductor – 25 Watt Discrete Power GaN on SiC HEMT

TGF2023-05
Table IV
Power Dissipation and Thermal Properties 1/
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70 ºC
Thermal Resistance, θjc
Thermal Resistance, θjc
Under RF Drive
Mounting Temperature
Vd = 40 V
Id = 500 mA
Pd = 20 W
Tbaseplate = 70 ºC
Vd = 40 V
Id = 1500 mA
Pout = 44.5 dBm
Pd = 31.8 W
Tbaseplate = 23 ºC
30 Seconds
Value
Pd = 20 W
Tchannel = 150 ºC
Tm = 2.0E+6 Hrs
θjc = 4.0 (ºC/W)
Tchannel = 150 ºC
Tm = 2.0E+6 Hrs
θjc = 4.0 (ºC/W)
Tchannel = 150 ºC
Tm = 2.0E+6 Hrs
Notes
2/ 3/
4/
320 ºC
Storage Temperature
-65 to 150 ºC
1/
Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate
2/
For a median life of 2E+6 hours, Power Dissipation is limited to
Pd(max) = (150 ºC – Tbase ºC)/θjc.
3/
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
4/
Channel temperatures at high drain voltages can be excessive, leading to reduced MTTF. Operation
at reduced baseplate temperatures and/or pulsed RF modulation is recommended.
Power De-rating Curve
48
44
40
Tm= 2.0E+6 Hrs
36
32
28
24
20
16
12
8
4
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Baseplate Temp (C)
4
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Dec 2008 © Rev A