TQP3M9007_15 Datasheet, PDF (3/9 Pages) TriQuint Semiconductor – W High Linearity LNA Gain Block

TQP3M9007
¼W High Linearity LNA Gain Block
Device Characterization Data
S11
Gain and Max Stable Gain
30
De-embedded S-parameter
Vcc = 5V
25
20
15
10
Gain (dB)
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
-0.2
-0.4
Swp Max
6GHz
3.0
4.0
5.0
10.0
Swp Min
0.01GHz
-0.2
-0.4
S22
Swp Max
6GHz
3.0
4.0
5.0
10.0
Swp Min
0.01GHz
S-Parameter Data
V_dd = +5 V, I_cq = 125 mA, T = +25^°C, unmatched 50 ohm system, calibrated to device leads
Freq
(MHz)
S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB)
50
-9.21
-171.69 21.92
165.87
-28.66
100
-9.18
178.66
21.72
164.31
-28.54
200
-9.58
168.58
21.39
154.89
-28.25
400
-11.09 155.91
20.71
134.86
-27.05
800
-13.55 148.37
18.58
99.19
-24.58
1000
-14.69 147.37
17.47
84.06
-23.58
1200
-15.31 148.14
16.33
70.48
-22.59
1500
-16.32 152.38
14.85
52.18
-21.45
1900
-16.36 155.45
13.11
30.26
-19.96
2000
-16.44 154.43
12.73
25.52
-19.77
2200
-16.55 154.33
11.98
15.20
-19.13
2500
-16.78 153.75
10.97
0.51
-18.24
2600
-16.83 154.69
10.59
-4.70
-18.14
3000
-17.62
157.51
9.53
-24.26
-17.17
3500
-18.79
154.34
8.24
-48.07
-16.19
4000
-20.11
176.37
7.01
-72.56
-15.53
S12 (ang)
7.52
8.08
11.48
16.59
17.74
14.87
12.31
6.08
-2.85
-5.72
-12.30
-20.16
-23.60
-36.43
-53.90
-72.99
S22 (dB)
-10.26
-10.62
-10.93
-11.61
-12.39
-13.43
-13.72
-14.84
-15.21
-15.43
-16.18
-16.76
-16.24
-16.21
-14.74
-11.54
S22 (ang)
-177.68
166.81
145.14
112.74
63.78
40.99
23.70
-3.77
-32.08
-42.20
-54.41
-84.02
-91.43
-128.42
-165.72
154.74
Data Sheet: Rev D 12/27/11
© 2011 TriQuint Semiconductor, Inc.
- 3 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network^®