TGF2955_15 Datasheet, PDF (3/19 Pages) TriQuint Semiconductor – 40 Watt Discrete Power GaN on SiC HEMT

TGF2955
40 Watt Discrete Power GaN on SiC HEMT
RF Characterization – Model Optimum Power Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Parameter
Typical Value
Units
Frequency (F)
1
3
6
10
15
GHz
Drain Voltage (VD)
32
32
32
32
32
V
Bias Current (IDQ)
150
150
150
150
150
mA
Output P3dB (P3dB)
46.3
46.4
46.3
46.3
46.0
dBm
PAE @ P3dB (PAE3dB)
64.7
63.2
58.9
53.5
45.4
%
Gain @ P3dB (G3dB)
26.7
19.2
14.3
10.7
7.8
dB
Parallel Output Resistance ⁽¹⁾
(Rp)
95.2
96.1
86.9
68.5
45.7
Ω∙mm
Parallel Output Capacitance ⁽¹⁾
(Cp)
-0.023
0.123
0.206
0.234
0.224
pF/mm
Load Impedance (ZL)
12.6-j0.17
12.1+j2.70
7.89+j5.33
4.51+j4.53
3.13+j3.02
Ω
Source Impedance (ZS)
1.64+j12.3
0.74+j4.08
0.70+j1.66
0.62+j0.39
0.55-j0.55
Ω
Notes:
1. Large signal equivalent output network (normalized).
RF Characterization – Model Optimum Efficiency Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Parameter
Typical Value
Units
Frequency (F)
1
3
6
10
15
GHz
Drain Voltage (VD)
32
32
32
32
32
V
Bias Current (IDQ)
150
150
150
150
150
mA
Output P3dB (P3dB)
45.1
45.1
44.9
45.7
45.8
dBm
PAE @ P3dB (PAE3dB)
70.5
69.0
63.9
56.4
46.8
%
Gain @ P3dB (G3dB)
Parallel Output Resistance ⁽¹⁾
(Rp)
27.9
160.0
20.7
154.3
15.2
142.6
11.1
88.6
8.1
dB
49.5
Ω∙mm
Parallel Output Capacitance ⁽¹⁾
(Cp)
0.292
0.276
0.277
0.269
0.252
pF/mm
Load Impedance (ZL)
19.5+j5.70
12.4+j9.97
5.85+j8.73
3.61+j5.41
2.75+j3.23
Ω
Source Impedance (ZS)
1.64+j12.3
0.74+j4.08
0.70+j1.66
0.62+j0.39
0.55-j0.55
Ω
Notes:
1. Large signal equivalent output network (normalized).
Datasheet: Rev A 10-20-14
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