TGA2583-SM_15 Datasheet, PDF (3/13 Pages) TriQuint Semiconductor – 2.7 to 3.7GHz, 10W GaN Power Amplifier

40.
Thermal and Reliability Information
TGA2583-SM
2.7 to 3.7GHz, 10W GaN Power Amplifier
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
TBASE = 85°C, VD = 25 V Pulse
PW = 100 us, DC = 10 %
At Freq = 2.9 GHz, PIN = 16 dBm:
IDQ = 175 mA, ID_Drive = 910 mA
POUT = 40.5 dBm
PDISS = 11.5 W
4.2
133
1.24E+10
°C/W
°C
Hrs
Notes:
1. Thermal resistance measured to back of package.
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
7.0
Thermal Resistance vs. P_DISS
T_BASE = 85 ⁰C
6.5
1E+15
1E+14
6.0
1E+13
5.5
1E+12
1E+11
5.0
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50
75 100 125 150 175 200 225 250 275
Channel Temperature, T_CH (C)
4.5
4.0
3.5
3.0
8
Pulse: 100us 10%
Pulse: 100us 20%
Pulse: 300us 10%
Pulse: 300us 10%
CW
10
12
14
16
18
20
22
P_DISS (W)
17
P_DISS vs. Frequency vs. T_BASE
16
Pulsed V_D = 25 V, I_DQ = 175 mA, P_IN = 16 dBm,
PW = 100 us, DC = 10%
15
14
13
12
11
10
9
8
+85°C
7
+25°C
6
−40°C
5
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Frequency (GHz)
22
P_DISS vs. Frequency vs. T_BASE
21
Pulsed V_D = 28 V, I_DQ = 175 mA, P_IN = 16 dBm,
PW = 100 us, DC = 10%
20
19
18
17
16
15
14
13
12
+85°C
+25°C
11
−40°C
10
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Frequency (GHz)
Preliminary Datasheet: Rev-A 02-20-15
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