T2G6001528-SG Datasheet, PDF (3/18 Pages) TriQuint Semiconductor – 15W, 28V, DC – 6 GHz, GaN RF Power Transistor

T2G6001528-SG
15W, 28V, DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Load Pull Performance at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol
G_LIN
P_3dB
PAE_3dB
G_3dB
Parameter
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
15.1
19.5
64.1
12.1
Max
Units
dB
W
%
dB
RF Characterization – Load Pull Performance at 4.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol
G_LIN
P_3dB
PAE_3dB
G_3dB
Parameter
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
12.6
19.6
63.8
9.6
Max
Units
dB
W
%
dB
RF Characterization – Load Pull Performance at 5.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol
G_LIN
P_3dB
PAE_3dB
G_3dB
Parameter
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
13.3
20
60.8
10.3
Max
Units
dB
W
%
dB
RF Characterization – Load Pull Performance at 6.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol
G_LIN
P_3dB
PAE_3dB
G_3dB
Parameter
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
11.6
20
60.7
8.6
Max
Units
dB
W
%
dB
Datasheet: Rev A- 02-27-14
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