WJA1500_15 Datasheet, PDF (2/8 Pages) TriQuint Semiconductor – 5 V Active-Bias InGaP HBT Gain Block

WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,CW,50 Ω,T=25ºC
Supply Voltage
Rating
-55 to 150 ^°C
+24 dBm
+6.5 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
V_cc
Tcase
Tj (for>10⁶ hours MTTF)
Min
+4.75
-40
Typ
+5
Max
+5.25
+85
+150
Units
V
°_C
°_C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: V_supply=+5 V, T_CASE = +25^°C, 50 Ω system.
Parameter
Conditions Min
Operational Frequency Range
50
Test Frequency
Gain
17.8
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
See Note 1.
+39
Output IP2
Noise Figure
Device Voltage, V_cc
Device Current, I_cc
79
Thermal Resistance (jnc to case) θ_jc
Typical
200
19.4
17
21
+20.5
+43.7
+59.8
5.0
5.0
95
Max
1000
20.8
99
78
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
°C/W
Notes:
1. OIP3 is measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
Data Sheet: Rev A 2/20/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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