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TGS4310-SM_15 Datasheet, PDF (2/13 Pages) TriQuint Semiconductor – 13-19GHz 2W SPDT Switch
TGS4310-SM
13-19GHz 2W SPDT Switch
Absolute Maximum Ratings
Parameter
Voltages (VDD, VBIT)
Currents (IDD, IBIT)
Power Dissipation, TBASE = 85 °C
Input Power (PIN), CW/Pulsed,
50 Ω, 85°C
Value
6V
-1.7 / +1.7 mA
1.8 W
34 dBm
Input Power (PIN), hot switching,
90/10%, 45 ns speed, 50% duty
cycle
33 dBm
Channel Temperature (TCH)
Mounting Temperature (30 sec)
200 °C
260 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Recommended Operating Conditions
Parameter
Min Typ Max Units
Frequency
13
19 GHz
Input Power Handling
(CW/Pulsed RF)
≤ 33
dBm
Reference Voltage, VDD
3.3 - 5
V
Control Voltage, VBIT
0/VDD
V
Currents (IDD, IBIT)
See plots p. 7
Operating Temperature -40
+85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VDD = 5 V, VBIT = 0/5 V, Temp= +25°C. Z0 = 50 Ω
Parameter
Min
Typical
Operational Frequency Range
13
Input Power at 0.1 dB Gain Compression (P-0.1dB)
(ICnWse)rtion Loss
33
< 1.7
Isolation
> 20
Input Return Loss – On-State (Common Port RL)
> 12
Output Return Loss – On-State (Switched Port RL)
> 12
Output Return Loss – Off-State (Isolated Port RL)
<1
Input TOI at PIN/Tone = 22 dBm (ITOI)
IM3 at PIN/Tone = 22 dBm
IM5 at PIN/Tone = 22 dBm
Insertion Loss Temperature Coefficient
55
-75
-75
0.003
Switching Speed (90/10%)
20
Max
19
Units
GHz
dBm
dB
dB
dB
dB
dB
dBm
dBc
dBc
dB/°C
ns
Preliminary Datasheet: Rev- 09-25-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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