TGS2353-2-SM_15 Datasheet, PDF (2/11 Pages) TriQuint Semiconductor – 0.5 to 18 GHz High Power SPDT Reflective Switch

TGS2353-2-SM
0.5 to 18 GHz High Power SPDT Reflective Switch
Absolute Maximum Ratings
Parameter
Rating
Control Voltage (V_C)
Control Current (I_C)
Power Dissipation (P_DISS)
RF Input Power, CW, 50 Ω, T = 25 °C
−50 V
−1.5 to 6 mA
3.5 W
41 dBm
Channel Temperature (T_CH)
Mounting Temperature (30 Seconds)
275 °C
320 °C
Storage Temperature
−40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter Min
Typ Max Units
V_C1
−40/0
V
V_C2
0/−40
V
I_C1 / I_C2
−0.25 to 0.1
mA
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VC1 = −40/0 V, VC2 = 0/−40 V, see Function Table on page 7
Parameter
Min
Typ
Max
Operational Frequency Range
0.5
18
Insertion Loss
<1.5
Input Return Loss – Common Port
15
Output Return Loss – Switched Port
15
Isolation
−30
Output Return Loss – Isolated Port
2
Input Power
40
Insertion Loss Temperature Coefficient
−0.004
Switching Speed – On
31
Switching Speed – Off
18
Units
GHz
dB
dB
dB
dB
dB
dBm
dB/°C
ns
ns
Preliminary Datasheet: Rev - 01-07-14
© 2014 TriQuint
- 2 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com