TGF2022-06 Datasheet, PDF (2/10 Pages) TriQuint Semiconductor – DC - 20 GHz Discrete power pHEMT

Advance Product Information
September 19, 2005
TABLE I
MAXIMUM RATINGS
TGF2022-06
Symbol
Parameter 1/
V⁺
Positive Supply Voltage
V^-
Negative Supply Voltage Range
I⁺
Positive Supply Current
| I_G | Gate Supply Current
P_IN Input Continuous Wave Power
P_D Power Dissipation
T_CH Operating Channel Temperature
T_M Mounting Temperature (30 Seconds)
T_STG Storage Temperature
Value
12.5 V
-5V to 0V
282 mA
7 mA
23 dBm
See note 3
150 °C
320 °C
-65 to 150 °C
Notes
2/
2/
2/
2/ 3/
4/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed P_D.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
P_D(max) = (150 °C – TBASE °C) / 138.0 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure
(T_M). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(T_A = 25 qC, Nominal)
Symbol
Parameter
Idss Saturated Drain Current
Gm
Transconductance
V_P
V_BGS
V_BGD
Pinch-off Voltage
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
Minimum
-
-
-1.5
-30
-30
Typical
180
225
-1
-
-
Maximum Unit
-
mA
-
mS
-0.5
V
-14
V
-14
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
2
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