TGA4543_15 Datasheet, PDF (2/13 Pages) TriQuint Semiconductor – 40.5 to 43.5 GHz Power Amplifier

TGA4543
40.5 - 43.5 GHz Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain to Gate Voltage, Vd - Vg
Drain Voltage, Vd
Gate Voltage, Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,
T=25°C
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Rating
10V
+6.5 V
-4 to 0 V
2086 mA
-8.2 to 113 mA
13.6 W
26 dBm
200°C
320°C
-40 to 150C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Operating Temp. Range -40
Vd
Id
Id (Under RF Drive)
Vg
Typ
+25
6.0
900
1500
-0.7
Max
+85
Units
C
V
mA
mA
V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical.
Parameter
Conditions
Min
Typ
Operational Frequency Range
40.5
Gain
23
Input Return Loss
8
Output Return Loss
10
Output Power
Saturation
30
Output Power
1dB Gain Compression
28.5
Output TOI
18 dBm Output/Tone
38
Gain Temperature Coefficient
-0.04
Power Temperature Coefficient 1dB Gain Compression
-0.023
Max
43.5
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB/°C
dB/°C
Preliminary Data Sheet: Rev – 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 2 of 12 -
Disclaimer: Subject to change without notice
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