T1G4004532-FS_15 Datasheet, PDF (2/13 Pages) TriQuint Semiconductor – 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor

T1G4004532-FS
45W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV_DG)
Gate Voltage Range (V_G)
Drain Current (I_D)
Gate Current (I_G)
Power Dissipation, CW (P_D)
Value
100 V min.
-7 to 0 V
7.0 A
-12.6 to 21 mA
61 W
RF Input Power, CW,
T = 25°C (P_IN)
41 dBm
Channel Temperature (T_CH)
275 °C
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (V_D)
32 V (Typ.)
Drain Quiescent Current (I_DQ)
220 mA (Typ.)
Peak Drain Current ( I_D)
2.5 A (Typ.)
Gate Voltage (V_G)
-2.9 V (Typ.)
Channel Temperature (T_CH)
225 °C (Max.)
Power Dissipation, CW (P_D)
44 W (Max)
Power Dissipation, Pulse (P_D)
68 W (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Operating conditions are based on 100 usec, 20% unless
otherwise specified.
RF Characterization – Load Pull Performance at 1.0 GHz ⁽¹⁾
Test conditions unless otherwise noted: T_A = 25 °C, V_D = 32 V, I_DQ = 220 mA
Symbol Parameter
Min
G_LIN Linear Gain
P_3dB Output Power at 3 dB Gain Compression
DE_3dB
PAE_3dB
G_3dB
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CGoaminparte3ssdioBnCompression
Notes:
1. V_DS = 32 V, I_DQ = 220 mA; Pulse: 100µs, 20%
Typical
23.4
40.1
57.2
56.7
20.4
RF Characterization – Load Pull Performance at 3.5 GHz ⁽¹⁾
Test conditions unless otherwise noted: T_A = 25 °C, V_D = 32 V, I_DQ = 220 mA
Symbol Parameter
Min
G_LIN Linear Gain
P_3dB Output Power at 3 dB Gain Compression
DE_3dB
PAE_3dB
G_3dB
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CGoaminparte3ssdioBnCompression
Notes:
1. V_DS = 32 V, I_DQ = 220 mA; Pulse: 100µs, 20%
Typical
20.0
45.0
56.8
55.7
17.0
Max
Max
Units
dB
W
%
%
dB
Units
dB
W
%
%
dB
Datasheet: RevA
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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