QPA2628D Datasheet, PDF (2/14 Pages) TriQuint Semiconductor – 25 – 31 GHz GaAs Low Noise Amplifier

QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
5.0 V
Drain Current (ID1/ID2/ID3)
45/45/160 mA
Gate Voltage Range
0 to −1.5 V
Gate Current (IG1/IG2/IG3 at 125 °C)
5.0/5.0/6.6 mA
RF Input Power (50 Ω, 85 °C)
20 dBm
Channel Temperature, TCH
175 °C
Mounting Temperature (30 seconds)
260 °C
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage
3.5 V
Drain Current (quiescent, IDQ)
90 mA
Drain Current (ID, Low noise / PSAT)
90 / 200 mA
Gate Voltage (typical)
−0.46 V
Operating Temperature Range
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 3.5 V, IDQ = 90 mA. Data de-embedded to MMIC bondwires.
Parameter
Min Typical Max
Frequency
25
31
Small Signal Gain
22
Noise Figure
1.7
1-dB Compression Point
19
Input Return Loss
8
Output Return Loss
14
3^RD Order Intermodulation level (Pout=0 dBm/tone)
−53
Output TOI (Pout=0 dBm/tone)
27
Gain Temperature Coefficient
−0.013
Units
GHz
dB
dB
dBm
dB
dB
dBc
dBm
dBm/°C
Datasheet: Rev - 03-14-16
© 2016 TriQuint
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Disclaimer: Subject to change without notice
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