T1G4020036-FS_15 Datasheet, PDF (17/21 Pages) TriQuint Semiconductor – 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor

T1G4020036-FS
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
C4, C5
C10, C11
C12, C13
C8, C9
C2, C3
C1
C14
C6, C7
R3, R4
R1, R2
L1, L2
L3, L4
Connectors
Value
10uF, 6.3V
1uF, 50V
220uF, 50V
2.7pF
5.6pF
1.6pF
0.8pF
0.5pF
10Ohms
0.001Ohms
22nH
6.6nH
SMA
Qty Manufacturer
2
TDK
2
AVX
2 United Chemi-Con
2
ATC
2
ATC
1
ATC
1
ATC
2
ATC
2
Vishay
2 Stackpole Electronics
2
Coilcraft
2
Coilcraft
2
Gigalane
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 17 of 21 -
Part Number
C1632X5R0J106M130AC
18121C105KAT2A
EMVY500ADA221MJA0G
600F2R7AT250X
600S5R6AT250X
600S1R6AT250X
600S0R8AT250X
600S0R5AT250X
CRCW060310R0FKEA
CSNL1206FT1L00
0805CS-220X_L
GA3093
1101055
Disclaimer: Subject to change without notice
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