TQTRX Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – Advanced Passives & MESFET Foundry Service

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TQTRpx
Advanced PasGsiavAess &MMESEFSEFTETFFoouunnddrryySSeerrvvice
Metal 3
Passivation Via
Metal 3 - 5 um
Metal 2
Dielectric
Metal 2 - 2 um
Metal 1
Metal 1
Metal 1 - 2 um
Dielectric
N+
N+
N-/P- Channel
E,D,G MESFET
MIM Metal
Dielectric
Metal 0
NiCr
Isolation Implant
MIM Capacitor
NiCr Resistor
Semi-Insulating GaAs Substrate
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General Description
TriQuint’s TQTRp process has advanced metal systems and
MESFET devices. It is targeted at high performance, small size
passive-only or passive/active circuits and utilizes over 9 µm of
gold metal. High density interconnections are accomplished
with three thick global and one surface metal interconnect lay-
ers. The four metal layers are encapsulated in a high perform-
ance dielectric that allows wiring flexibility and plastic packag-
ing simplicity. Precision NiCr resistors, implanted resistors,
and high value MIM capacitors are included. Advanced 0.6 µm
enhancement/depletion mode MESFET devices include an inte-
grated power MESFET, general purpose D-Mode MESFET, and
Enhancement Mode MESFET and are based on the TQTRx
process, currently TriQuint’s highest volume process. The
TQTRp process is available on 150-mm (6 inch) wafers.
Features
• High Density Interconnects:
• 3 Global
• 1 Local
• 9 µm Total Thickness
• High-Q Passives; >50 @ 2 GHz
• 0.6 µm Gate Length MESFET Op-
tional: Power & General Purpose
D-FETs; E-FET
• Schottky-Barrier Diodes
• Bulk & Thin Film Resistors
• High Value Capacitors
• Dielectric Encapsulated Metals
• Planarized Surface; simplified
plastic packaging
• Substrate Vias Available
• Volume Production Processes
• Low Cost Passives-Only Option
Applications
• Active and/or Passive
Components
• Circuits Requiring High Q Passive
Elements
• Ideal for Mixers, Converters, and
Phase-Shifters with Baluns, Trans-
formers, E-M Structures
• Mobile Phone Front End Blocks
• RF Module Front-Ends
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