English
Language : 

TQRLC Datasheet, PDF (1/3 Pages) TriQuint Semiconductor – Advanced Passives Foundry Service
PrRoedluecatsioend Process
TQRTLRCx
AdvGanaAcesdMPEaSssFiEvTesFFoouunnddrryy SSeerrvvice
TQRTRLCx Process Cross-Section
General Description
TriQuint’s TQRLC is a pure passives process. It is targeted at
high performance, small size passive-only circuits and utilizes
over 9 µm of gold metal. High density interconnections are ac-
complished with three thick global and one surface metal inter-
connect layers. The four metal layers are encapsulated in a high
performance, low dielectric constant material that allows wiring
flexibility and plastic packaging simplicity. Precision NiCr resis-
tors, inductors, and high value MIM capacitors are available.
The process is based on the TQTRx process, currently
TriQuint’s highest volume process. The TQRLC process is
available on 150-mm (6 inch) wafers.
Features
• Thick 4 Layer Metal; > 9 µm total
thickness
• High Density Interconnects:
• 3 Global
• 1 Local
• High-Q Passives; Inductor Q >50
@ 2 GHz
• Low Cost: Passives Only
• Thin Film Resistors
• Dielectric Encapsulated Metals
• Planarized Surface;
simplified plastic packaging
• Volume Production Process
Applications
• Passive Components:
• Phase Shifters
• Baluns
• Transformers
• Couplers
• Mixers (with off-chip di-
ode arrays)
• Circuits Requiring High-Q
Passive Elements
• Matching Circuits
• RF Module Front-End Filters
• General RF and Microwave Imped-
ance Matching
T2HT2H33rriill00iillQQss00bbuuooNNiinnrrEEoott ,,BBSSOOeerroommrrooeeiicckkggoowwoonnnnooddoo99uudd77cc11ttPPoo22kkrr44wwyy
Semiconductors for Communications
www.triquint.com
PPaaggee11ooff73;;RReevv12.0.3131//1185//0041
EEmmaaPPiillhh:: ooFFiinnnnaaffxxeeoo::::@ @55550000tt33rr33ii----qq6666uu1111ii5555nn----tt8899..cc9900oo0000mm5500