TQPHT Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – 0.5 um pHEMT Foundry Service

Production Process
TQPHT
0.5 um pHEMT Foundry Service
Nitride
Metal 2
Metal 2 - 4um
Dielectric
Dielectric
Metal 1
Metal 1
Metal 1 - 2um
Dielectric
MIM Metal
Metal 0
NiCr
N+ Pseudomorphic
Channel
pHEMT
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MIM Capacitor
NiCr Resistor
Semi-Insulating GaAs Substrate
0.5 um pHEMT Device Cross-Section
Features
• D-Mode, -0.8 V Vp
• InGaAs Active Layer pHEMT
Process
• 0.5 um Optical Lithography
Gates
• 17 V D-G Breakdown Voltage
• High Density Interconnects:
• 2 Global
• 1 Local
• High-Q Passives
• Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Based on Production 0.25 µm
pHEMT and Passives Processes
• TOM3 FET Models Available
General Description
TriQuint’s 0.5 µm pHEMT process is based on our production
released 0.25 µm gate process. TQPHT substitutes lower cost
optical lithography in place of e-beam and adds TriQuint’s
unique thick metal scheme. This process is targeted for high
efficiency and linearity in power amplifiers, low noise amplifiers,
and linear, low loss and high isolation RF switch applications.
The TQPHT process offers a D-Mode pHEMT with a –0.8 V
pinch off. The three metal interconnecting layers are encapsu-
lated in a high performance dielectric that allows wiring flexibil-
ity, optimized die size and plastic packaging simplicity. Precision
NiCr resistors and high value MIM capacitors are included al-
lowing higher levels of integration, while maintaining smaller,
cost –effective die sizes.
Applications
• Highly Efficient and Linear
Power Amplifiers
• Low Loss, High Isolation
Switches for Wireless Trans-
ceivers and Basestations
• Higher Supply Voltage Applica-
tions
• Integrated RF Front Ends–
LNA, SW, PA
Fully Released
Production Process
Page 1 of 5; Rev 2.0 7/22/03