TQPED Datasheet, PDF (1/3 Pages) TriQuint Semiconductor – Precision, 100UA Gain Selectable Amplifier

Pre-Production Process
TQPED
0.5 um E/D pHEMT Foundry Service
Nitride
Metal 2
Metal 2 - 4um
Dielectric
Dielectric
Metal 1
Metal 1
Dielectric
MIM Metal
Metal 0
Metal 1 - 2um
NiCr
N+ Pseudomorphic
Channel
Iso^Il^sa^oti^lo^an^tioImⁿ p^Imla^pn^lt^ant
E-Mode / D-Mode
MIM Capacitor
pHEMT _{Semi-Insulating GaAs Substrate}
NiCr Resistor
0.5 um pHEMT Device Cross-Section
General Description
TriQuint’s TQPED process is based on our production-released
0.5 µm TQPHT process. TQPED partners an E-Mode pHEMT
device with our TQPHT D-Mode transistors to be the first
foundry pHEMT process to integrate E-Mode and D-Mode tran-
sistors on the same wafer. This process is targeted for low noise
amplifiers, linear, low loss and high isolation RF switch applica-
tions, converters and integrated RF Front Ends. The TQPED
process offers a D-Mode pHEMT with a –0.8 V pinch off, and an
E-Mode pHEMT with a +0.35 V threshold voltage. The three
metal interconnecting layers are encapsulated in a high perform-
ance dielectric that allows wiring flexibility, optimized die size
and plastic packaging simplicity. Precision NiCr resistors and
high value MIM capacitors are included allowing higher levels of
integration, while maintaining smaller, cost –effective die sizes.
Features
• E-Mode, 0.35 V, Vth
• D-Mode, -0.8 V Vp
• InGaAs Active Layer pHEMT
Process
• 0.5 um Optical Lithography
Gates
• High Density Interconnects:
• 2 Global
• 1 Local
• High-Q Passives
• Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Based on Production TQPHT
pHEMT and Interconnect
• Nominal TOM3 FET Models
Available
Applications
• Highly Efficient, and Linear
Power Amplifiers
• Low Loss, High Isolation, Low-
Harmonic Contnt Switches
• Integrated digital control logic
for Switches and Transceivers
• Converters
• Integrated RF Front Ends– LNA,
SW, PA
• Wireless Transceivers, Base sta-
tions, Direct Broadcast Satellite
Radars, Digital Radios, RF /
Mixed Signal ICs
• Power Detectors and Couplers
Production Release: Q1’2005
Page 1 of 3; Rev 1.0 12/1/2004