TQP7M9105 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 1W High Linearity Amplifier

TQP7M9105
1W High Linearity Amplifier
Applications
 Repeaters
 BTS Transceivers
 BTS High Power Amplifiers
 CDMA / WCDMA / LTE
 ISM Equipment
 General Purpose Wireless
Product Features
3-pin SOT-89 Package
Functional Block Diagram
 50-1500 MHz
 +30 dBm P1dB at 940MHz
 +47 dBm Output IP3 at 940MHz
 19.5 dB Gain at 940 MHz
 +5V Single Supply, 220 mA Current
 Internal RF overdrive protection
 Internal DC overvoltage protection
 On chip ESD protection
 SOT-89 Package
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
Pin Configuration
The TQP7M9105 is a high linearity, high gain 1W
driver amplifier in industry standard, RoHS compliant,
SOT-89 surface mount package. This InGaP/GaAs
HBT delivers high performance across 0.05 to 1.5 GHz
while achieving +47 dBm OIP3 and +30 dBm P1dB at
940 MHz while only consuming 220 mA quiescent
current. All devices are 100% RF and DC tested.
Pin #
1
3
2, 4
Symbol
RF Input
RF Output / Vcc
Ground
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations
and can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver
amplifier in wireless infrastructure where high linearity,
medium power, and high efficiency are required. The
device an excellent candidate for transceiver line cards
and high power amplifiers in current and next
generation multi-carrier 3G / 4G base stations.
Ordering Information
Part No.
Description
TQP7M9105
1 W High Linearity Amplifier
TQP7M9105-PCB900 860-960 MHz tuned EVB
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev C 9/24/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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