TQP777002 Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – 2.4GHz ISM Band InGaP HBT Matched Power Amplifier

TQP777002
Data Sheet
2.4GHz ISM Band InGaP HBT Matched Power Amplifier
Functional Block Diagram
Vc1
16
N/C 1
N/C
Vc2
15
14
Bias controller
RF In ²
Vc3
13
12 ^N/C
11 ^{RF Out}
N/C 3
10 ^N/C
Vref 4
9 N/C
5
6
7
8
N/C
N/C
N/C
Vdet_out
Product Description
The TQP777002 is a high performance, high linearity, medium-power
amplifier designed for 802.11b/g WLAN and other applications in the 2.4GHz
ISM band. The device exhibits industry-leading power added efficiency
under 802.11b and 802.11g modulated signals. The RF input match and
output matches are integrated on chip as are the second and third stage
bias chokes. The power amplifier is manufactured using TriQuint’s InGaP
HBT process and is packaged in an industry standard 3mm x 3mm VQFN-16
Pb-Free package.
Electrical Specifications
Parameter
Frequency Range
Power Gain
Error Vector Magnitude (Pout =
+18.5dBm, 54Mbps OFDM Signal)
Linear Output Power (guaranteed
ACP under 802.11b modulation)
802.11b ACP; +22.0 dBm Output;
1^st Side Lobe, 11 Mbps
802.11b ACP; +22.0 dBm Output;
2^nd Side Lobe, 11Mbps
Min
typ
2400
-
28.5
30.0
<3.0
21
22
-37
-55
Test Conditions: Ta=25°C; Vc1=Vc2=Vc3=3.3V Vref=2.90V
max
units
2500 MHz
dB
%
dBm
dBc
dBc
Features
• High Linearity, 2.4 GHz ISM Band PA for
802.11b/g WLAN Systems
• Integrated Output Power Detector
• Leadless 3.0 x 3.0 mm SMT Pb-Free
Package
• Temperature Compensated Bias Network
with Bias Shutdown Mode
• EVM < 3.0% @ +18.5 dBm Linear Output
Power 802.11g modulation
• +22 dBm Linear Output Power 802.11b
modulation
• Integrated input and output match
• Integrated bias chokes
• Single 3.3V supply
Data Sheet: Subject to change without notice
2
For additional information and latest specifications, see our website: www.triquint.com
Revision A, July 22, 2004