TQP770001 Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)

TQP770001
Preliminary Data Sheet
Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)
Functional Block Diagram
Product Description
The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT
GaAs technology offering state of the art reliability, temperature stability and
ruggedness. The PA is a two-stage design requiring several SMD tuning
elements for input and output matching, gain shaping, and bias injection.
Features include an integrated bias controller with a power control (variable gain)
function. The bias controller also acts to provide temperature compensation. The
PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back
paddle. A recommended drawing is provided in section 4.3.2. This PA is
designed to operate in Bluetooth v2.0 class 1 systems. It is also intended to be
Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for
both 2 Mbps and 3 Mbps modulation modes.
Features
• InGaP HBT Technology
• Bluetooth v2.0 class 1 systems
• High Efficiency: 50% @ 21.5dBm
• EDR (Enhanced Data Rate) Compliant
• Under EDR modulation, its low AM-AM and
AM-PM distortion guarantee high modulation
accuracy
• Will operate under Bluetooth FSK, 8DPSK,
and Pi/4-DQPSK modulations
• Optimized for 50 ohm System
• Integrated bias controller with a power
control (variable gain) function
• Small 12-pin QFN, 2x2mm module
• Lead-free 260°C RoHS Compliant
• Full ESD Protection
Applications
• Bluetooth v2.0 + EDR class 1 systems
Electrical Specifications
Conditions: Vcc = 3.3 V, T = 25°C
Package Style
Parameter
Frequency
RF transmit power Vctrl=3.3V
Gain @ Pin= -10 dBm
PAE @ 21.5dBm
Min Typ Max
Units
2.4
2.5
GHz
19.5 21.0
-
dBm
25.0 27.0
-
dB
50
%
12-Pin 2.0x2.0x0.6mm STSLP Package
Bottom View
Preliminary Data Sheet: Subject to change without notice
1
For additional information and latest specifications, see our website: www.triquint.com
Revision B, Sept. 18, 2006