TQP3M6004 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – Low Band Dual LNA (700-915 MHz)

TQP3M6004
Datasheet
Low Band Dual LNA (700-915 MHz)
Functional Block Diagram
RF_inA
V_gateA
RF_inB
V_gateB
RF_outA
A
V_drainA
B
RF_outB
V_drainB
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Product Description
The TriQuint TQP3M6004 is a packaged low noise dual pHEMT discrete
device operating from 700 - 915 MHz. This broadband device is useful in a
number of different applications, and is particularly well suited for cellular or
WiMAX base station or tower-mounted amplifier products.
TQP3M6004 consists of a single monolithic GaAs die mounted in a small
4 x 4 QFN package.
This device is a discrete dual LNA device is intended to be used as a
balanced pair in wireless networks applications.
Electrical Characteristics¹
Parameter
Gain
Saturated Output Power
Noise Figure
Input IP3
Drain Current
Typ Units
20.7 dB
20.7 dBm
0.32 dB
12.5 dBm
70 mA
Note 1: Test Conditions: Vd = 4 V, Freq. = 830 MHz, Id = 70 mA per channel, TA = 25 ˚C.
Features
• 0.32 dB Noise Figure
• 20.7 dB Gain
• 12.5 dBm IIP3
• 20 dBm P1dB
• 4 x 4 mm package
• RoHS compliant, Pb-free
Applications
• Base Station receivers
• Tower-mounted amplifiers
Package Style
6004
5555
0950
16-lead QFN 4 x 4 mm
Content will be added or may be revised.
1
For additional information and latest specifications, see our website: www.triquint.com
May 2010 – Rev B