TQP13-N Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – 0.13 um D pHEMT Foundry Service

Production Process
TQP13-N
0.13 um D pHEMT Foundry Service
0.13 um pHEMT (TQP13-N) Process Cross-section
0.13 um pHEMT Device Cross-Section
Features
• Low cost Optical Lithography
0.13um Gate
• High Ft, ~95 GHz
• Low Noise, < 0.5 dB in Ku-band
• Interconnects: 2 layers (1 Air-
bridge & 1 local)
• High Value MIM Capacitor
• Resistors
• Thin film resistor
• Epi resistor
• Backside Vias
• High Volume 150 mm Wafers
• Same Baseline as Mass Produc-
tion Today
General Description
TriQuint's TQP13-N process is a unique, low-cost 150mm wafer,
optical lithography 0.13um pHEMT process used for low noise
and medium power applications in Ku-band through V-band ap-
plications. The process features a highly repeatable 0.13um
self-aligned gate pHEMT FET coupled with high density capaci-
tors, epi resistors, thin film resistors (TFR), and 2 layers of gold
interconnect. With typical Ft of 95 GHz, the process is used for
V-band automotive radar and high frequency point to point radio
applications. With typical NF < .5dB in Ku-band, the process is
used for low cost LNB amplifier and convert blocks in consumer
Direct Broadcast Satellite dish systems. Simple to use, repeat-
able and highly competitive TQP13-N is ideal for emerging con-
sumer mmWave applications.
Applications
• DBS LNB and Down Convert
• Automotive Radar
• Satellite Communications
• Low Noise Point to Point/Point to
Multipoint Radio LNA
• High Frequency Medium Power
• High Frequency Mixer
• Fiber Optic TIA and Driver,
10Gb/s - 40Gb/s
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